2D Materials for Nanoelectronics

Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). This talk will address the comprehensive treatment of these materials and their applications in nanoelectronic devices. This talk would highlight the potential of atomically thin, two-dimensional materials like graphene, transition metal dichalcogenides (TMDs), and hexagonal boron nitride to revolutionize nanoelectronics due to their exceptional electrical, mechanical, and thermal properties, enabling the development of high-performance, flexible, and energy-efficient devices with unique functionalities like tunable bandgaps and high carrier mobility, paving the way for advancements in transistors, optoelectronics, and spintronics application, explores the exciting possibilities of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for next-generation nanoelectronics. Their unique electronic properties, including high carrier mobility and tunable bandgaps, offer significant advantages for the development of high-performance transistors, flexible electronics, and optoelectronic devices. While challenges remain in terms of large-scale synthesis and device integration, ongoing research on 2D material heterostructures and strain engineering holds great promise for future advancements in the field of nanoelectronics 2D Materials for Nanoelectronics presents extensive, state-of-the-art coverage of the fundamental and applied aspects of this exciting field. Speaker(s): Prof. Sangeeta Singh, Virtual: https://events.vtools.ieee.org/m/454784